40um 850nm 28Gbps / 112Gbps GaAs PIN PD Chip & 1xN Array Chip (N=4, 8, 12)
OS-PD2840、OS-PD4X2840
Features
High data rates up to 28Gbps
Resonsiable for 850nm
High responsivity
Low capacitance
Low dark current
Anode/Cathode Pads on Front Side
Application
112Gbps SR4 QSFP28
850nm 28Gbps &1x4 1x8 1x12 Array
Active Optical Cable (AOC) Receiver
Short-Reach Optical Networks
Specification (Tc=25℃；Single Die)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Active area diameter | D | 40 | μm | |||
Response range | λ | 850 | 860 | nm | ||
Responsivity | R | 0.55 | 0.6 | A/W | λ=850nm | |
Dark current | ID | 0.01 | 0.05 | nA | VR=-5V | |
Capacitance | C | 0.085 | 0.11 | pF | VR=-2V, f=1MHz | |
Bandwidth | Bw | 20.0 | 22.0 | GHz | 3dB down, RL=50Ω |
Die size | 250X250 | μm | For Single Die | |
250 X 1000 | For 1x4 Array | |||
250 X 2000 | For 1x8 Array |
2023-08
GaAs 850nm100Gbps PAM4 / 850nm 400Gbps PAM4 1x4 Array PD ChipOS-GaAs5030 / OS-GaAs4x5030FeaturesBandwidthup to 36GHzφ30um active areaLow cap…… [了解更多]
2023-08
GaAs 850nm50Gbps PAM4 / 850nm 200Gbps PAM4 1x4 Array PD ChipOS-GaAs2838 / OS-GaAs4x2838FeaturesBandwidthup to 28GHzφ38um active areaLow capa…… [了解更多]
2023-08
InGaAs 56Gbaud PIN & 4x56Gbaud Array PD Chip － OS-PD5016、OS-PD4x5016 1310nm 100G -400G PAM4 PIN PD芯片,1310nm 100Gbps PAM4 光探測(cè)器芯片 & 4x100Gbps…… [了解更多]
2023-08
InGaAs 28Gbaud PIN & 1x4 Array PD Chip － OS-PD2818、OS-PD4x2818 50G -200G PAM4 PIN PD芯片 1310nm 50Gbps PAM4 光探測(cè)器芯片 & 4x50Gbps PAM4 光探測(cè)器陣列芯片… [了解更多]
2023-08
45um 850nm 25Gbps / 100Gbps GaAs PIN PD Chip Features High data rates up to 25Gbps Resonsiable for 850nm High responsivity Low capacitance L…… [了解更多]
產(chǎn)品應(yīng)用覆蓋光接入網(wǎng)、5G無(wú)線通信、光傳輸網(wǎng)、數(shù)據(jù)中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達(dá)等領(lǐng)域，并可提供不同響應(yīng)波長(zhǎng)的各種大面積光探測(cè)器芯片及一維和二維光探測(cè)器陣列芯片等定制服務(wù)。
——產(chǎn)品應(yīng)用覆蓋光接入網(wǎng)、5G無(wú)線通信、光傳輸網(wǎng)、數(shù)據(jù)中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達(dá)等領(lǐng)域，并可提供不同響應(yīng)波長(zhǎng)的各種大面積光探測(cè)器芯片及一維和二維光探測(cè)器陣列
